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2SC5182 Datasheet(PDF) 2 Page - NEC |
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2SC5182 Datasheet(HTML) 2 Page - NEC |
2 / 12 page 2 2SC5182 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Collector Cutoff Current ICBO 100 nA VCB = 5 V, IE = 0 Emitter Cutoff Current IEBO 100 nA VEB = 1 V, IC = 0 DC Current Gain hFE 70 140 VCE = 2 V, IC = 20 mA*1 Insertion Power Gain (1) |S21e|2 7 8.5 dB VCE = 2 V, IC = 20 mA, f = 2 GHz Insertion Power Gain (2) |S21e|2 6 7.5 dB VCE = 1 V, IC = 10 mA, f = 2 GHz Noise Figure (1) NF 1.3 2.0 dB VCE = 2 V, IC = 3 mA, f = 2 GHz Noise Figure (2) NF 1.3 2.0 dB VCE = 1 V, IC = 3 mA, f = 2 GHz Gain Bandwidth Product (1) fT 9 12 GHz VCE = 2 V, IC = 20 mA, f = 2 GHz Gain Bandwidth Product (2) fT 7 10 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz Feedback Capacitance Cre 0.4 0.8 pF VCB = 2 V, IE = 0 mA, f = 1 MHz*2 *1 Measured with pulses: Pulse width ≤ 350 µs, duty cycle ≤ 2 %, pulsed. *2 Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal of the bridge. hFE Class Class FB Marking T86 hFE 70 to 140 |
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