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DFM600FXM18-A000 Datasheet(PDF) 2 Page - Dynex Semiconductor

Part # DFM600FXM18-A000
Description  Fast Recovery Diode Module Preliminary Information
Download  7 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DFM600FXM18-A000 Datasheet(HTML) 2 Page - Dynex Semiconductor

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DFM600FXM18-A000
2/7
www.dynexsemi.com
Units
V
A
A
kA2s
W
kV
pC
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case = 25˚C unless stated otherwise
Symbol
V
RRM
I
F
I
FM
I
2t
Pmax
V
isol
Q
pd
Test Conditions
T
vj = 125˚C
DC, T
case = 75˚C, Tvj = 125˚C
T
case = 110˚C, tp = 1ms
V
R = 0, tp = 10ms, Tvj = 125˚C
T
case = 25˚C, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1 = 1500V, V2 = 1100V, 50Hz RMS
Max.
1800
600
1200
120
2500
4.0
10
Parameter
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I2t value fuse current rating
Maximum power dissipation
Isolation voltage
Partial discharge
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M6
Electrical connections - M8
Parameter
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
˚C/kW
˚C/kW
˚C
˚C
Nm
Nm
Max.
40
8
125
125
5
10
Typ.
-
-
-
-
-
-
Min.
-
-
-
–40
-
-
Internal insulation:
AlN
Baseplate material:
AlSiC
Creepage distance:
20mm
Clearance:
10mm
CTI (Critical Tracking Index): 175


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