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SGM0410S Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SGM0410S Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page SGM0410S 2.2A , 100V , RDS(ON) 310 mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 28-Sep-2012 Rev.A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 100 - - V VGS=0, ID= 250µA Gate-Threshold Voltage VGS(th) 1 - 2.5 V VDS=VGS, ID=250µA Forward Transconductance gfs - 5.4 - S VDS=5V, ID=2A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current IDSS - - 1 µA VDS=80V, VGS=0, TJ=25°C - - 5 VDS=80V, VGS=0, TJ=55°C Static Drain-Source On-Resistance 2 RDS(ON) - - 310 m VGS=10V, ID=2A - - 320 VGS=4.5V, ID=1A Gate Resistance Rg - 2 - VGS= VDS=0, f =1.0MHz Total Gate Charge(10V) Qg - 9.1 - nC ID=2A VDS=50V VGS=10V Gate-Source Charge Qgs - 2 - Gate-Drain Change Qgd - 1.4 - Turn-on Delay Time 2 Td(on) - 2 - nS VDD=50V ID=2A VGS=10V RG=3.3 Rise Time Tr - 21.6 - Turn-off Delay Time Td(off) - 11.2 - Fall Time Tf - 18.8 - Input Capacitance Ciss - 508 - pF VGS =0 VDS=15V f =1.0MHz Output Capacitance Coss - 29 - Reverse Transfer Capacitance Crss - 16.4 - Source-Drain Diode Diode Forward Voltage 2 VSD - - 1.2 V IS=1A, VGS=0 Continuous Source Current 1,4 IS - - 2.2 A VD=VG=0, Force Current Pulsed Source Current 2,4 ISM - - 5.5 A Reverse Recovery Time Trr - 17.5 - nS IF=2A, dl/dt=100A/µS, TJ=25°C Reverse Recovery Charge Qrr - 14 - nC Note: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2% 3. The power dissipation is limited by 150°C, junc tion temperature. 4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. |
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