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DG858BW45 Datasheet(PDF) 10 Page - Dynex Semiconductor |
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DG858BW45 Datasheet(HTML) 10 Page - Dynex Semiconductor |
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10 / 19 page  DG858BW45 10/19 0 500 1000 1500 2000 3000 2500 On-state current I T - (A) 0 1000 2000 3000 4000 5000 6000 Conditions: T j = 25˚C Cs = 3.0µF dI GQ/dt = 40A/µs 7000 8000 A: V DM = 100% VDRM B: V DM = 75% VDRM C: V DM = 50% VDRM 9000 A B C A Figure 16. Turn-off energy loss vs on-state current 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dI GQ/dt- (A/µs) 4000 4500 5000 5500 6000 6500 7000 7500 8000 Conditions: I T = 3000A T j = 25˚C Cs = 3.0 µF 8500 9000 V DM = 100% VDRM V DM = 75% VDRM V DM = 50% V DRM Figure 17. Turn-off energy vs rate of rise of reverse gate current |
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