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SID10N30-600I Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SID10N30-600I Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente SID10N30-600I 5.8A, 300V, RDS(ON) 600 m N-Channel Enhancement MOSFET 04-Dec-2012 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test conditions Static Gate-Threshold Voltage VGS(th) 1 - 3.5 V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - - ±10 nA VDS=0, VGS=±20V - - 1 VDS=240V, VGS=0 Zero Gate Voltage Drain Current IDSS - - 25 μA VDS=240V, VGS=0, TJ=55°C On-State Drain Current 1 ID(ON) 10 - - A VDS=5V, VGS=10V - - 600 VGS=10V, ID=2.9A Drain-Source On-Resistance 1 RDS(ON) - - 900 mΩ VGS=5.5V, ID=2.6A Forward Transconductance 1 gFS - 10 - S VDS=15V,,ID=2.9A Diode Forward Voltage VSD - 0.8 - V IS=5A, VGS=0 Dynamic 2 Total Gate Charge Qg - 13.5 - Gate-Source Charge Qgs - 4.1 - Gate-Drain Charge Qgd - 3.4 - nC ID=2.9A VDS=120V VGS=10V Turn-On Delay Time Td(ON) - 12.1 - Rise Time Tr - 13.3 - Turn-Off Delay Time Td(OFF) - 28.9 - Fall Time Tf - 16.8 - nS VDD=120V VGEN=10V RL=41.4Ω ID=2.9A RGEN=6Ω Input Capacitance Ciss - 1092 - Output Capacitance Coss - 90 - Reverse Transfer Capacitance Crss - 52 - pF VGS=0 VDS=15V f =1MHz Notes: 1 Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. |
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