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DIM400LSS17-A000 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DIM400LSS17-A000 Datasheet(HTML) 7 Page - Dynex Semiconductor |
7 / 10 page DIM400LSS17-A000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area 0 100 200 300 400 500 600 700 800 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Foward voltage, VF - (V) Tj = 125˚C Tj = 25˚C VF is measured at power busbars and not the auxiliary terminals 0 100 200 300 400 500 600 700 800 900 0 200 400 600 800 1000 1200 1400 1600 1800 Collector emitter voltage, Vce - (V) Conditions: Tcase = 125˚C, Vge = 15V, Rg(off) = 4.7ohms Module Chip 0 50 100 150 200 250 300 350 400 0 400 800 1200 1600 2000 Reverse voltage, VR - (V) Tj = 125˚C Fig. 10 Forward bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 1000 Collector-emitter voltage, Vce - (V) IC(max) DC tp = 1 ms tp = 100µs Tvj = 125˚C, Tcase = 68˚C tp = 50µs |
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