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SI4842BDY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4842BDY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 73532 S09-0228-Rev. C, 09-Feb-09 Vishay Siliconix Si4842BDY Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 1 mA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 30 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 6.4 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.4 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 30 Α Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 20 A 0.0034 0.0042 Ω VGS = 4.5 V, ID = 15 A 0.0047 0.0057 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 90 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 3650 pF Output Capacitance Coss 635 Reverse Transfer Capacitance Crss 300 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 25 A 68 100 nC VDS = 15 V, VGS = 4.5 V, ID = 25 A 29 43 Gate-Source Charge Qgs 12.6 Gate-Drain Charge Qgd 9.4 Gate Resistance Rg f = 1 MHz 1.25 2 Ω Turn-on Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 125 190 ns Rise Time tr 190 280 Turn-Off Delay Time td(off) 38 60 Fall Time tf 13 20 Turn-on Delay Time td(on) VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 15 25 Rise Time tr 15 25 Turn-Off Delay Time td(off) 42 65 Fall Time tf 815 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 5.6 A Pulse Diode Forward Currenta ISM 60 Body Diode Voltage VSD IS = 2.7 A 0.74 1.1 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 34 55 ns Body Diode Reverse Recovery Charge Qrr 31 50 nC Reverse Recovery Fall Time ta 18 ns Reverse Recovery Rise Time tb 16 |
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