SI4842BDY datasheet(2/10 Pages) VISHAY

Part #	SI4842BDY

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73532

S09-0228-Rev. C, 09-Feb-09

Vishay Siliconix

Si4842BDY

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 1 mA

30

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

30

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 6.4

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS , ID = 250 µA

1.4

3

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

µA

VDS = 30 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

30

Α

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 20 A

0.0034

0.0042

Ω

VGS = 4.5 V, ID = 15 A

0.0047

0.0057

Forward Transconductancea

gfs

VDS = 15 V, ID = 20 A

90

S

Dynamicb

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

3650

pF

Output Capacitance

Coss

635

Reverse Transfer Capacitance

Crss

300

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 25 A

68

100

nC

VDS = 15 V, VGS = 4.5 V, ID = 25 A

29

43

Gate-Source Charge

Qgs

12.6

Gate-Drain Charge

Qgd

9.4

Gate Resistance

Rg

f = 1 MHz

1.25

2

Ω

Turn-on Delay Time

td(on)

VDD = 15 V, RL = 1.5 Ω

ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω

125

190

ns

Rise Time

tr

190

280

Turn-Off Delay Time

td(off)

38

60

Fall Time

tf

13

20

Turn-on Delay Time

td(on)

VDD = 15 V, RL = 1.5 Ω

ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω

15

25

Rise Time

tr

15

25

Turn-Off Delay Time

td(off)

42

65

Fall Time

tf

815

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

5.6

A

Pulse Diode Forward Currenta

ISM

60

Body Diode Voltage

VSD

IS = 2.7 A

0.74

1.1

V

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

34

55

ns

Body Diode Reverse Recovery Charge

Qrr

31

50

nC

Reverse Recovery Fall Time

ta

18

ns

Reverse Recovery Rise Time

tb

16

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