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DIM800NSM33-A000 Datasheet(PDF) 1 Page - Dynex Semiconductor |
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DIM800NSM33-A000 Datasheet(HTML) 1 Page - Dynex Semiconductor |
1 / 10 page DIM800NSM33-A000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com FEATURES s 10 µs Short Circuit Withstand s High Thermal Cycling Capability s Non Punch Through Silicon s Isolated MMC Base with AlN Substrates APPLICATIONS s High Reliability Inverters s Motor Controllers s Traction Drives s Choppers The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM800NSM33-A000 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 µs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM800NSM33-A000 Note: When ordering, please use the whole part number. KEY PARAMETERS V CES 3300V V CE(sat) (typ) 3.2V I C (max) 800A I C(PK) (max) 1600A DIM800NSM33-A000 Single Switch IGBT Module Preliminary Information Replaces August 2001, version DS5486-1.4 DS5486-2.0 October 2001 Fig. 1 Single switch circuit diagram Fig. 2 Electrical connections - (not to scale) Outline type code: N (See package details for further information) C1 E1 C2 E2 G E2 C1 E2 - Aux Emitter C1 - Aux Collector C2 C1 Aux C G Aux E E1 E2 External connection External connection |
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