DIM800NSM33-A000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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www.dynexsemi.com

FEATURES

s

10

µs Short Circuit Withstand

s

High Thermal Cycling Capability

s

Non Punch Through Silicon

s

Isolated MMC Base with AlN Substrates

APPLICATIONS

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High Reliability Inverters

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Motor Controllers

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Traction Drives

s

Choppers

The Powerline range of high power modules includes half

bridge, chopper, dual and single switch configurations covering

voltages from 600V to 3300V and currents up to 2400A.

The DIM800NSM33-A000 is a single switch 3300V, n

channel enhancement mode, insulated gate bipolar transistor

(IGBT) module.

The IGBT has a wide reverse bias safe

operating area (RBSOA) plus full 10

µs short circuit withstand.

This device is optimised for traction drives and other applications

requiring high thermal cycling capability.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM800NSM33-A000

Note: When ordering, please use the whole part number.

KEY PARAMETERS

V

CES

3300V

V

CE(sat)

(typ)

3.2V

I

C

(max)

800A

I

C(PK)

(max)

1600A

DIM800NSM33-A000

Single Switch IGBT Module

Preliminary Information

Replaces August 2001, version DS5486-1.4

DS5486-2.0 October 2001

Fig. 1 Single switch circuit diagram

Fig. 2 Electrical connections - (not to scale)

Outline type code: N

(See package details for further information)

C1

E1

C2

E2

G

C2

C1

Aux C

G

Aux E

E1

E2

External connection

External connection