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DRD420D Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DRD420D Datasheet(HTML) 3 Page - Dynex Semiconductor |
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3 / 7 page  3/7 www.dynexsemi.com DRD420D SURGE RATINGS Conditions 10ms half sine; T case = 175 oC V R = 50% VRRM - 1/4 sine 10ms half sine; T case = 175 oC V R = 0 Max. Units Symbol Parameter I FSM Surge (non-repetitive) forward current I 2tI2t for fusing I FSM Surge (non-repetitive) forward current I 2t I 2t for fusing 24.5 x 10 6 A 2s 70 kA 15.68 x 106 A2s 56 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W - 0.025 Anode dc Clamping force 45.0kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.003 Double side - T vj Virtual junction temperature T stg Storage temperature range Single side - Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter -55 200 oC Forward (conducting) - oC - 0.006 oC/W oC/W Cathode dc - 0.027 oC/W Double side cooled - 0.013 oC/W Clamping force 40.0 48.0 kN 175 Reverse (blocking) - oC 185 |
Similar Part No. - DRD420D |
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Similar Description - DRD420D |
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