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B772C-Y Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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B772C-Y Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente B772C -3A , -40V PNP Plastic Encapsulated Transistor 23-Aug-2012 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low frequency power amplifier High Current Low Speed Switching CLASSIFICATION OF hFE Product-Rank B772C-R B772C-O B772C-Y B772C-GR Range 60~120 100~200 160~320 200~400 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V Collector Current - Continuous IC -3 A Collector Power Dissipation PC 1.25 W Junction, Storage Temperature TJ, TSTG -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO -40 - - V IC= -100μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -30 - - V IC= -10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -6 - - V IE= -100μA, IC=0 Collector Cut – Off Current ICBO - - -1 μA VCB= -40V, IE=0 Collector Cut – Off Current ICEO - - -10 μA VCE= -30V, IB=0 Emitter Cut – Off Current IEBO - - -1 μA VEB= -6V, IC=0 60 - 400 VCE= -2V, IC= -1A DC Current Gain hFE 32 - - VCE= -2V, IC= -100mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.5 V IC= -2A, IB= -200mA Base-emitter saturation voltage VBE(sat) - - -1.5 V IC= -2A, IB= -200mA Transition Frequency fT 50 - - MHz VCE= -5V, IC= -100mA f=10MHz Emitter Collector Base TO-126C Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 7.80 8.20 H 0.80 1.60 B 3.00 3.40 J 0.45 0.60 C 10.80 11.20 K 0.66 0.86 D 15.30 15.70 L 1.30 1.50 E 3.90 4.10 M 1.17 1.37 F 4.04 4.24 N 3.10 3.30 G 2.28 TYP. O 2.70 2.90 |
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Similar Description - B772C-Y |
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