2SC5194 datasheet(2/10 Pages) NEC

Part #	2SC5194

Description	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

Logo

2 / 10 page

2SC5194

2

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cutoff Current

ICBO

VCB = 5 V, IE = 0

100

nA

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

100

nA

DC Current Gain

hFE

VCE = 1 V, IC = 3 mANote 1

80

160

Insertion Power Gain (1)

|S21e|2

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

3.0

4.0

dB

Insertion Power Gain (2)

|S21e|2

VCE = 3 V, IC = 20 mA, f = 2.0 GHz

8.5

dB

Noise Figure (1)

NF

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

1.7

2.5

dB

Noise Figure (2)

NF

VCE = 3 V, IC = 7 mA, f = 2.0 GHz

1.5

dB

Gain Bandwidth Product (1)

fT

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

4

5

GHz

Gain Bandwidth Product (2)

fT

VCE = 3 V, IC = 20 mA, f = 2.0 GHz

10

GHz

Collector Capacitance

Cre

VCB = 1 V, IE = 0, f = 1.0 MHzNote 2

0.65

0.8

pF

Notes 1. Pulse Measurement: PW

≤ 350

µs, Duty cycle ≤ 2 %, Pulsed

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE Classification

Rank

FB

Marking

T88

hFE

80 to 160

Similar Part No. - 2SC5194

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	2SC5194	221Kb / 12P	SILICON TRANSISTOR 1994
	2SC5194-T1	221Kb / 12P	SILICON TRANSISTOR 1994
	2SC5194-T2	221Kb / 12P	SILICON TRANSISTOR 1994

More results

Similar Description - 2SC5194

Manufacturer	Part #	Datasheet	Description
NEC	2SC2148	52Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC3356	102Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)
	2SC4536	60Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Technology Corp	2SC4094	323Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Leshan Radio Company	L2SC3357	309Kb / 2P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Technology Corp	2SC2148	180Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR August 1996
NEC	2SC3582	99Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Renesas Technology Corp	UPA806T	209Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC3583	321Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC4095	329Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
NEC	2SC5195	63Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

More results

2SC5194 Datasheet(PDF) 2 Page - NEC

2SC5194 Datasheet(HTML) 2 Page - NEC

Similar Part No. - 2SC5194

Similar Description - 2SC5194

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL