CZD772 datasheet(1/3 Pages) SECOS

Part #	CZD772

Description	PNP Type Plastic Encapsulate Transistors

Download	3 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

Logo

1 / 3 page

Elektronische Bauelemente

CZD772

PNP Type

Plastic Encapsulate Transistors

TO-252(D-Pack)

1. BASE

2. COLLECTOR

3. EMITTER

FEATURES

Power Dissipation

PCM: 10 W ( Ta = 25 C )

Collector Current

ICM: -3 A

Designed for use in output stage of

10W amplifier, voltage regulature,

DC-DC converter and relay driver.

Collector-Base Voltage

V(BR)CBO: - 40 V (min)

hFE VALUES ARE CLASSIFIED AS FOLLOWS:

ITEM

Q

P

E

hFE

100 ~ 200

160 ~ 320

250 ~ 320

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

RoHS Compliant Product

0. 51 0. 10

0. 51 0. 05

0 0. 10

2. 30 0. 10

6. 50 0. 15

5. 30 0. 10

0. 60 0. 10

0. 80 0. 10

2. 30 0. 10

1. 20

9

0. 51

0

5

1

2

3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

Parameter

Symbol

Value

Units

Collector-Base Voltage

VCBO

-40

V

A

W

Collector-Emitter Voltage

VCEO

-30

Emitter-Base Voltage

VEBO

-5

Collector Current

IC

-3

Collector Current (Pulse)

IC

-7

Base Current

IB

-0.6

Collector Power Dissipation

PD

10

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max Units

Collector-Base Breakdown Voltage

V(BR)CBO

IC = -100 A, IE = 0

-40

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE = -10 A, IC = 0

5

V

Collector Cut-off Current

ICBO

VCB = -30V, IE = 0

-1

A

Emitter Cut-off Current

IEBO

VEB = -3V, IC = 0

-1

A

*Pulse Test: Pulse Width 380ms, Duty Cycle 2%

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = -1mA, IB = 0

-30

V

DC Current Gain

*hFE1

VCE = -2V, IC = -20mA

30

DC Current Gain

*hFE2

VCE = -2V, IC = -1A

100

500

Collector-Emitter Saturation Voltage

*VCE(sat)

IC = -2A, IB = -0.2A

-0.3

-0.5

V

Base-Emitter Voltage

*VBE(sat)

IC = -2A, IB = -0.2A

-1

-2

V

Collector Power Dissipation

Cob

VCB = -10V, IE = 0, f = 1MHz

55

pF

Transition Frequency

fT

VCE = -5V, IC = -0.1A, f = 100 MHz

80

MHz

Similar Part No. - CZD772

Manufacturer	Part #	Datasheet	Description
SeCoS Halbleitertechnol...	CZD772M	314Kb / 2P	PNP Plastic Encapsulate Transistor
	CZD772M-Y	314Kb / 2P	PNP Plastic Encapsulate Transistor
	CZD772M-Y-C	314Kb / 2P	PNP Plastic Encapsulate Transistor

More results

Similar Description - CZD772

Manufacturer	Part #	Datasheet	Description
SeCoS Halbleitertechnol...	2SB772	368Kb / 2P	PNP Type Plastic Encapsulate Transistors
	2SB649	258Kb / 2P	PNP Type Plastic Encapsulate Transistors
	B772	384Kb / 2P	PNP Type Plastic Encapsulate Transistors
	BC636	221Kb / 2P	PNP Type Plastic Encapsulate Transistors
TECH PUBLIC Electronics...	TPMMDT3906	7Mb / 4P	PNPPNP Plastic-Encapsulate Transistors
	MMDT5401	1Mb / 4P	PNPPNP Plastic-Encapsulate Transistors
	MMDT2907A	1Mb / 4P	PNPPNP Plastic-Encapsulate Transistors
	TPMMDT5401	1Mb / 4P	PNPPNP Plastic-Encapsulate Transistors
	TPMMDT2907A	1Mb / 4P	PNPPNP Plastic-Encapsulate Transistors
Micro Commercial Compon...	MPSW51A	374Kb / 3P	PNP Plastic-Encapsulate Transistors

More results

CZD772 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

CZD772 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Similar Part No. - CZD772

Similar Description - CZD772

Html Pages

1 2 3

Datasheet Download

Link URL