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2SC5336 Datasheet(PDF) 1 Page - NEC

Part No. 2SC5336
Description  NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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PRELIMINARY DATA SHEET
1996
©
Document No. P10938EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
Silicon Transistor
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
PACKAGE DIMENSIONS
High gain
(in millimeters)
| S21 |
2 = 12 dB TYP, @f = 1 GHz, V
CE = 10 V, Ic = 20 mA
New power mini-mold package version of a 4-pin type
gain-improved on the 2SC3357
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
PT
Note1
1.2
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
ICB0
VCB = 10 V, IE = 0
1.0
µA
Emitter Cutoff Current
IEB0
VEB = 1 V, IC = 0
1.0
µA
DC Current Gain
hFE
VCE = 10 V, IC = 20 mA
Note2
50
120
250
Gain Bandwidth Product
fT
VCE = 10 V, IC = 20 mA
6.5
GHz
Feed-back Capacitance
Cre
VCB = 10 V, IE = 0, f = 1.0 MHz
Note3
0.5
0.8
pF
Insertion Power Gain
| S21e |
2
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
12.0
dB
Noise Figure
NF
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
1.1
dB
Noise Figure
NF
VCE = 10 V, IC = 40 mA, f = 1.0 GHz
1.8
3.0
dB
Notes 2. Pulse measurement : PW
≤ 350
µS, Duty Cycle ≤ 2 %
3. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
hFE Classification
Rank
RH
RF
RE
Marking
RH
RF
RE
hFE
50 to 100
80 to 160
125 to
250
4.5±0.1
1.6±0.2
1.5±0.1
0.42
±0.06
0.46
±0.06
3.0
1.5
0.42
±0.06
C
EB
E
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.25±0.02
Note 1. 0.7 mm
× 16 cm2 double sided ceramic substrate (Copper plating)




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