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2SD1158 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD1158 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1158 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 50 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ;IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=2A, IB=0.1A 0.5 V VBEsat Base-emitter saturation voltage IC=2A, IB=0.1A 1.5 V ICBO Collector cut-off current VCB=80V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=10V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 250 Switching times ton Turn-on time 0.5 µs ts Storage time 3.0 µs tf Fall time IC=5A;IB1=-IB2=0.5A RL=6? Pw = 20µs, Duty@2% 0.8 µs |
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