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GP800DDM18 Datasheet(PDF) 6 Page - Dynex Semiconductor |
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GP800DDM18 Datasheet(HTML) 6 Page - Dynex Semiconductor |
6 / 10 page GP800DDM18 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig.7 Diode typical forward characteristics 0 200 400 600 800 1000 1200 1400 1600 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Foward voltage, VF - (V) Tj = 125˚C Tj = 25˚C Fig.8 Reverse bias safe operating area 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 400 800 1200 1600 2000 Collector-emitter voltage, Vce - (V) Tcase = 125˚C Vge = ±15V Rg(min) = 2.2Ω Fig.9 Forward bias safe operating area Fig.10 Transient thermal impedance 0.1 1 10 100 1 10 1000 100 10000 Pulse width, tp - (ms) Diode Transistor 1 10 100 1000 10000 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V) IC max. (single pulse) t p = 1ms Conditions: Tvj = 125˚C, Tcase = 50˚C |
Similar Part No. - GP800DDM18 |
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Similar Description - GP800DDM18 |
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