GP800NSS33

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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www.dynexsemi.com

FEATURES

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Non Punch Through Silicon

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Isolated Copper Baseplate with AL

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Low Inductance Internal Construction

APPLICATIONS

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High Power Inverters

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Motor Controllers

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Induction Heating

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Resonant Converters

The Powerline range of high power modules includes dual,

half bridge and single switch configurations covering voltages

from 600V to 3300V and currents up to 4800A.

The GP800NSS33 is a single switch 3300V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. The IGBT has a wide reverse bias safe operating area

(RBSOA) ensuring reliability in demanding applications.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP800NSS33

Note: When ordering, please use the whole part number.

KEY PARAMETERS

V

CES

3300V

V

CE(sat)

(typ)

3.6V

I

C

(max)

800A

I

C(PK)

(max)

1600A

GP800NSS33

Single Switch IGBT Module

Preliminary Information

Replaces February 2000 version, DS5358-2.0

DS5358-2.1 March 2001

Fig. 1 Single switch circuit diagram

Fig. 2 Electrical connections - (not to scale)

Outline type code: N

(See package details for further information)

C1

E1

C2

E2

G

C2

C1

Aux C

G

Aux E

E1

E2

External connection

External connection