Electronic Components Datasheet Search |
|
MAS110S Datasheet(PDF) 2 Page - Dynex Semiconductor |
|
MAS110S Datasheet(HTML) 2 Page - Dynex Semiconductor |
2 / 9 page MAS110S 2/9 THYRISTOR SURGE RATINGS Conditions 10ms half sine; T case = 125 oC V R = 0% VDRM Max. Units Symbol Parameter I TSM Surge (non-repetitive) on-state current I 2tI2t for fusing 20.0 x 103 A2s 2.0 kA THYRISTOR DYNAMIC CHARACTERISTICS V TM Parameter Symbol Conditions Maximum on-state voltage At 600A peak, T case = 25 oC I DRM Peak off-state current At V DRM, Tcase = 125 oC dV/dt Maximum linear rate of rise of off-state voltage To 60% V DRM Tj = 125 oC, Gate open circuit Min. Max. Units - 2.9 V -70 mA - 1000 V/ µs Repetitive 50Hz - 500 A/ µs Rate of rise of on-state current dI/dt From 67% V DRM to 600A, Gate source 20V, 20 Ω t r = < 0.5µs, Tj = 125˚C V T(TO) Threshold voltage At T vj = 125 oC r T On-state slope resistance At T vj = 125 oC 1.6 -V - 1.4 m Ω Turn-off time t q µs 10 - µs 12 - µs 15 - I T = 100A, Tj = 125˚C, dI R/dt = 30A/µs, VGK = 0V dV/dt = 20V/ µs to 60% V DRM, VR = 1V. t q code: W t q code: S t q code: X |
Similar Part No. - MAS110S |
|
Similar Description - MAS110S |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |