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MAS110S Datasheet(PDF) 2 Page - Dynex Semiconductor

Part # MAS110S
Description  Fast Turn-off Asymmetric Thyristor/Diode Module
Download  9 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

MAS110S Datasheet(HTML) 2 Page - Dynex Semiconductor

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MAS110S
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THYRISTOR SURGE RATINGS
Conditions
10ms half sine; T
case = 125
oC
V
R = 0% VDRM
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2tI2t for fusing
20.0 x 103
A2s
2.0
kA
THYRISTOR DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 600A peak, T
case = 25
oC
I
DRM
Peak off-state current
At V
DRM, Tcase = 125
oC
dV/dt
Maximum linear rate of rise of off-state voltage
To 60% V
DRM Tj = 125
oC, Gate open circuit
Min.
Max.
Units
-
2.9
V
-70
mA
-
1000
V/
µs
Repetitive 50Hz
-
500
A/
µs
Rate of rise of on-state current
dI/dt
From 67% V
DRM to 600A,
Gate source 20V, 20
Ω
t
r = < 0.5µs, Tj = 125˚C
V
T(TO)
Threshold voltage
At T
vj = 125
oC
r
T
On-state slope resistance
At T
vj = 125
oC
1.6
-V
-
1.4
m
Ω
Turn-off time
t
q
µs
10
-
µs
12
-
µs
15
-
I
T = 100A, Tj = 125˚C,
dI
R/dt = 30A/µs, VGK = 0V
dV/dt = 20V/
µs to 60%
V
DRM, VR = 1V.
t
q code: W
t
q code: S
t
q code: X


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