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MP02XX175-10 Datasheet(PDF) 2 Page - Dynex Semiconductor |
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MP02XX175-10 Datasheet(HTML) 2 Page - Dynex Semiconductor |
2 / 9 page 2/9 MP02 XX 175 Series Symbol Parameter Conditions Max. Units A V R = 0 V R = 50% VRRM V R = 0 V R = 50% VRRM A 2s A 2s A 10ms half sine; T j = 150 oC 10ms half sine; T j = 150 oC Surge (non-repetitive) on-state current I FSM I 2t for fusing I 2t Symbol Parameter Conditions oC/W Thermal resistance - junction to case per Diode R th(j-c) Virtual junction temperature T vj oC oC T sto Storage temperature range Mounting torque = 6Nm with mounting compound 3 phase halfwave dc Commoned terminals to base plate AC RMS, 1min, 50Hz Max. 0.38 150 R th(c-hs) Isolation voltage Symbol Parameter Conditions Forward voltage 30 V FM I RM Peak reverse current At V RRM, Tj = 150 oC At 450A , T case = 25 oC V TO Threshold voltage V 0.81 m Ω 0.84 At T vj = 150 oC At T vj = 150 oC r T On-state slope resistance V isol kV oC/W Thermal resistance - case to heatsink per Diode 5625 4500 158000 100000 Units 0.37 oC/W oC/W 0.39 0.07 -40 to 150 2.5 mA Units Max. V 1.30 SURGE RATINGS - PER ARM CHARACTERISTICS THERMAL & MECHANICAL RATINGS |
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