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2SD1276 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD1276 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1276 2SD1276A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD1276 60 V(BR)CEO Collector-emitter breakdown voltage 2SD1276A IC=30mA , IB=0 80 V VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=12mA 2 V VCEsat- Collector-emitter saturation voltage IC=5A ;IB=20mA 4 V VBE Base-emitter voltage VCE=3V; IC=3A 2.5 V 2SD1276 VCB=60V ;IE=0 ICBO Collector cut-off current 2SD1276A VCB=80V; IE=0 0.2 mA 2SD1276 VCE=30V; IB=0 ICEO Collector cut-off current 2SD1276A VCE=40V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 2 mA hFE-1 DC current gain IC=3A ; VCE=0.5V 1000 hFE-2 DC current gain IC=3A ; VCE=3V 2000 10000 fT Transition frequency IC=0.5A; VCE=10V;f=1MHz 20 MHz Switching times ton Turn-on time 0.5 µs ts Storage time 4 µs tf Fall time IC=2A ;IB1=8mA IB2=-8mA;VCC=50V 1 µs hFE-2 Classifications Q R 2000-5000 4000-10000 |
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