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MP03XX440-20 Datasheet(PDF) 2 Page - Dynex Semiconductor |
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MP03XX440-20 Datasheet(HTML) 2 Page - Dynex Semiconductor |
2 / 10 page MP03 XX 440 Series 2/10 Symbol Parameter Conditions Max. Units A V R = 0 V R = 50% VRRM V R = 0 V R = 50% VRRM A 2s A 2s A 11250 405000 10ms half sine; T j = 150 oC 10ms half sine; T j = 150 oC Surge (non-repetitive) on-state current I FSM I 2t for fusing I 2t Symbol Parameter Conditions oC/W Units oC/W oC/W Thermal resistance - case to heatsink per Diode Thermal resistance - junction to case per Diode R th(j-c) Virtual junction temperature T vj oC oC T sto Storage temperature range Mounting torque = 5Nm with mounting compound 3 phase halfwave dc Commoned terminals to base plate AC RMS, 1min, 50Hz Max. R th(c-hs) Isolation voltage V isol Symbol Parameter Conditions 1.29 mA Forward voltage 30 V FM I RM Peak reverse current At V RRM, Tj = 150 oC At 1000A , T case = 25 oC V TO Threshold voltage V 0.94 m Ω 0.32 At T vj = 150 oC At T vj = 150 oC r T On-state slope resistance -40 to 150 0.12 0.13 0.14 oC/W 0.05 150 kV 2.5 Units Max. V 630000 9000 SURGE RATINGS - PER ARM THERMAL & MECHANICAL RATINGS CHARACTERISTICS |
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