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TA329Q Datasheet(PDF) 3 Page - Dynex Semiconductor |
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TA329Q Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 10 page TA329..Q 3/10 GATE TRIGGER CHARACTERISTICS AND RATINGS V DWM = 12V, RL = 3Ω, Tcase = 25 oC Typ. Max. Units Conditions Parameter Symbol V GT Gate trigger voltage V DWM = 12V, RL = 3Ω, Tcase = 25 oC I GT Gate trigger current -4 V - 250 mA V RGM Peak reverse gate voltage I FGM Peak forward gate current - P GM Peak gate power - -7 V -10 A -50 W -15 W - - P G(AV) Average gate power |
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