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SSF2102 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSF2102 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page  Elektronische Bauelemente SSF2102 2.1A , 20V , RDS(ON) 60 mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET 14-Jan-2014 Rev.A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=10µA Gate-Threshold Voltage VGS(th) 0.65 0.95 1.2 V VDS=VGS, ID=50µA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±8V, VDS=0 Drain-Source Leakage Current IDSS - - 1 µA VDS=20V, VGS=0 Forward Transconductance 1 gfs - 8 - S VDS=5V, ID=3.6A Diode Forward Voltage VSD - 0.76 1.2 V IS=0.94A, VGS=0 - 45 60 VGS=4.5V, ID=3.6A Static Drain-Source On-Resistance 1 RDS(ON) - 70 115 m VGS=2.5V, ID=3.1A Dynamic Characteristics Total Gate Charge Qg - 4 - Gate-Source Charge Qgs - 0.65 - Gate-Drain Change Qgd - 1.5 - nC ID=3.6A VDS=10V VGS=4.5V Input Capacitance 2 Ciss - 300 - Output Capacitance 2 Coss - 120 - Reverse Transfer Capacitance 2 Crss - 80 - pF VGS =0 VDS=10V f =1.0MHz Switching Parameters Turn-on Delay Time 2 Td(on) - 7 - Rise Time 2 Tr - 55 - Turn-off Delay Time 2 Td(off) - 16 - Fall Time 2 Tf - 10 - nS VDD=10V VGEN=4.5V RG=6 RL=5.5 ID=3.6A Note: 1. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 2. These parameters have no way to verify. |
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