SSPR46N03 datasheet(1/4 Pages) SECOS

Part #	SSPR46N03

Description	N-Channel Enhancement Mode Power MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

SSPR46N03

46A , 30V , RDS(ON) 9 mΩ

Ω

N-Channel Enhancement Mode Power MOSFET

18-Apr-2014 Rev.A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSRS46N03 provide the designer with the best

combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness. The SPR-8PP package

is universally preferred for all commercial-industrial surface

mount applications and suited for low voltage applications

such as DC/DC converters.

FEATURES

Lower Gate Charge

Simple Drive Requirement

Fast Switching Characteristic

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SPR-8PP

3K

13 inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

TC=25°C

46

TC=100°C

29

TA=25°C

11

Continuous Drain Current

1@V

GS=10V

TA=70°C

ID

8.7

A

Pulsed Drain Current

2

IDM

92

A

Single Pulse Avalanche Energy

3

EAS

130

mJ

Avalanche Current

IAS

34

A

Power Dissipation

4

TA=25°C

P D

29

W

Operating Junction & Storage Temperature

TJ, TSTG

55~150

°C

Thermal Resistance Rating

Thermal Resistance Junction-Ambient

1(Max).

RθJA

75

°C / W

Thermal Resistance Junction-Case

1(Max).

RθJC

4.31

°C / W

46N03

= Date code

SPR-8PP

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

3.25

3.40

G

1.35

1.55

B

3.05

3.25

H

0.24

0.35

C

3.20

3.40

I

1.13 REF.

D

3.00

3.20

J

0.30

0.50

E

0.65 BSC.

K

0.10

0.20

F

2.40

2.60

L

0.70

0.90

G

S

D

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