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SSPR46N03 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSPR46N03 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 4 page Elektronische Bauelemente SSPR46N03 46A , 30V , RDS(ON) 9 mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET 18-Apr-2014 Rev.A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSRS46N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SPR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING PACKAGE INFORMATION Package MPQ Leader Size SPR-8PP 3K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TC=25°C 46 TC=100°C 29 TA=25°C 11 Continuous Drain Current 1@V GS=10V TA=70°C ID 8.7 A Pulsed Drain Current 2 IDM 92 A Single Pulse Avalanche Energy 3 EAS 130 mJ Avalanche Current IAS 34 A Power Dissipation 4 TA=25°C P D 29 W Operating Junction & Storage Temperature TJ, TSTG 55~150 °C Thermal Resistance Rating Thermal Resistance Junction-Ambient 1(Max). RθJA 75 °C / W Thermal Resistance Junction-Case 1(Max). RθJC 4.31 °C / W 46N03 = Date code SPR-8PP Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 3.25 3.40 G 1.35 1.55 B 3.05 3.25 H 0.24 0.35 C 3.20 3.40 I 1.13 REF. D 3.00 3.20 J 0.30 0.50 E 0.65 BSC. K 0.10 0.20 F 2.40 2.60 L 0.70 0.90 G S S S D D D D |
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