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HER502 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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HER502 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  HER501 - HER508 HIGH EFFICIENT RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.16 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL HER 501 HER 502 HER 503 HER 504 HER 505 HER 506 HER 507 HER 508 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Maximum Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 5.0 A VF 1.1 1.7 V Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA Maximum Reverse Recovery Time ( Note 1 ) Trr 50 75 ns Typical Junction Capacitance ( Note 2 ) CJ 50 pf Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 01 : April 2, 2002 A A 200 RATING IFSM IF(AV) 5.0 DO-201AD 0.21 (5.33) 0.19 (4.82) 0.375 (9.52) 0.285 (7.24) 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) |
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