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Model G200N50W4

Features:

• RoHS Compliant

• 200 Watts

• DC - 2.2 GHz

• AlN Ceramic

• Non-Nichrome Resistive

Element

• Low VSWR

Flange Mount Termination

Description

The G200N50W4 is high performance Aluminum Nitride (AlN) flange

mount termination intended as a cost competitive alternative to Beryllium

Oxide (BeO). The termination is well suited to all cellular frequency bands

such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power

handling makes the part ideal for terminating circulators and for use in

power combiners. The termination is also RoHS compliant!

General Specifications

Resistive Element

Thick Film

Substrate

AlN Ceramic

Mounting Flange

Nickel Plated Copper

Operating Temperature

-50 to +150

°C (see de rating chart)

Tolerance is

±0.010”, unless otherwise specified. Designed to meet of exceed

applicable portions of MIL-E-5400. All dimensions in inches.

Electrical Specifications

Resistance Value:

50 Ohms,

± 2%

Power:

200 Watts

Frequency Range:

DC – 2.2 GHz

Return Loss

> 20 dB from DC to 2.2 GHz

Specification based on unit properly installed using suggested mounting instructions

and a 50 ohm nominal impedance. Specifications subject to change.

Outline Drawing

UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES

1 of 2

200 Watts, 50

Ω