RBV800D - RBV810D

SILICON BRIDGE RECTIFIERS

PRV : 50 - 1000 Volts

Io : 8.0 Amperes

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Ideal for printed circuit board

* Very good heat dissipation

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

* Weight : 7.7 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

RBV

800D

RBV

801D

RBV

802D

RBV

804D

RBV

806D

RBV

808D

RBV

810D

UNIT

Maximum Recurrent Peak Reverse Voltage

50

100

200

400

600

800

1000

Volts

Maximum RMS Voltage

35

70

140

280

420

560

700

Volts

Maximum DC Blocking Voltage

50

100

200

400

600

800

1000

Volts

Maximum Average Forward Current Tc = 55

°C

8.0

Amps.

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

300

Amps.

Current Squared Time at t < 8.3 ms.

I

166

A

1.0

Volts

Maximum DC Reverse Current

Ta = 25

°C

10

µA

at Rated DC Blocking Voltage

Ta = 100

°C

200

µA

Typical Thermal Resistance (Note 1)

R

2.2

°C/W

Typical Thermal Resistance at Junction to Ambient

R

15

°C/W

Operating Junction Temperature Range

- 40 to + 150

°C

Storage Temperature Range

- 40 to + 150

°C

Notes :

1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.

UPDATE : AUGUST 3, 1998

RATING

RBV25

Dimensions in millimeters

C3

4.9 ± 0.2

3.9 ± 0.2

∼∼

∅3.2 ± 0.1

∼∼

0.7 ± 0.1

1.0 ± 0.1

2.0 ± 0.2

30 ± 0.3

7.5

±0.2

10

±0.2

++

7.5

±0.2