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SSPS7630N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSPS7630N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSPS7630N 9.4 A, 30 V, RDS(ON) 19 mΩ Ω Ω Ω Dual-N Channel Mode Power MOSFET 28-Jun-2013 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package MPQ Leader Size DFN3*3-8PP 3K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TA = 25°C 9.4 A Continuous Drain Current 1 TA = 70°C ID 6.8 A Pulsed Drain Current 2 IDM 30 A Continuous Source Current (Diode Conduction) 1 IS 2.1 A TA = 25°C 2.5 W Total Power Dissipation 1 TA = 70°C PD 1.3 W Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦10 sec RθJC 83 °C / W Thermal Resistance Junction-ambient (Max.) 1 Steady State RθJA 120 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. DFN3*3-8PP D D S S G G D D Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 3.0 BSC. G 0.7 0.9 B 3.2 BSC. H 1.1 BSC. C 0.2 0.35 I 2.475 BSC D 0.65 BSC. J 1.8 BSC. E 0.1 0.25 K 0.3 0.5 F 3.0 BSC L 0.52 BSC |
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