NE38018 datasheet(3/9 Pages) CEL

Part #	NE38018

Description	GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

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Manufacturer	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

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Power Out

Efficiency

Gain

18

16

14

12

10

8

6

4

2

0

-2

-4

-20

-15

-10

-5

0

5

0

10

15

20

25

30

35

40

45

50

POUT @ 1 dB = 17 dBm

Gain @ 1 dB = 16.5 dB

Efficiency @ 1 dB = 38%

PSAT @ 1 dB = 17.5 dBm

OUTPUT POWER, GAIN AND POWER

ADDED EFFICIENCY vs. INPUT POWER

VDS = 3 V, IDS = 20 mA, f = 2 GHz

Input Power, PIN (dBm)

Output Power

IM3

IM5

20

0

-20

-40

-60

-20

-15

-10

-5

0

5

-60

-50

-40

-30

-20

-10

0

OUTPUT POWER AND

INTERMODULATION PRODUCTS

vs. INPUT POWER

VDS = 3 V, IDS = 20 mA, f = 2 GHz

Input Power, PIN (dBm)

120

100

80

40

20

60

0.00

1.0

2.0

4.0

3.0

5.0

0.12 V

0.18 V

0.24 V

0.30 V

0.36 V

0.42 V

0.06 V

VGS = 0.00 V

DC PERFORMANCE

Drain Voltage, VDS (V)

100

80

60

40

20

0.00

60

120

180

240

300

-800

-600

-400

-200

0.00

IDSS = 97 mA

GM = 80 mS

2 V, 5 mA

DRAIN CURRENT AND TRANSCONDUCTANCE

vs. GATE TO SOURCE VOLTAGE

Gate to Source Voltage, VGS (mV)

TYPICAL PERFORMANCE CURVES (TA = 25°C)

NE38018

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NE38018 Datasheet(PDF) 3 Page - California Eastern Labs

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