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RU3M Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # RU3M
Description  FAST RECOVERY RECTIFIER DIODES
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

RU3M Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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RU3AM - RU3M
FAST RECOVERY
RECTIFIER DIODES
PRV : 400 - 600 Volts
Io : 1.5 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RU3M
RU3AM
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
400
600
V
Maximum RMS Voltage
VRMS
280
420
V
Maximum DC Blocking Voltage
VDC
400
600
V
Maximum Average Forward Current Ta = 55
°C
IF(AV)
1.5
A
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle , Sine wave, Single Shot )
Maximum Forward Voltage at IF = 1.5 A
VF
1.1
V
Maximum DC Reverse Current
Ta = 25
°C
IR
10
µA
at Rated DC Blocking Voltage
Ta = 100
°C
IR(H)
350
µA
Maximum Reverse Recovery Time ( Note 1 )
Trr
0.4
µs
Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 10 mA, IRP = 10 mA.
Page 1 of 2
Rev. 01 : April 2, 2002
RATING
A
30
IFSM
D2A
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
0.161 (4.1)
0.154 (3.9)
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )


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