1) J-STD20 and JESD22

Final Data Sheet

2

Rev. 2.0, 2012-03-23

1

Description

Features



Revolutionary semiconductor material - Silicon Carbide



Benchmark switching behavior



No reverse recovery/ No forward recovery



Temperature independent switching behavior



High surge current capability



Pb-free lead plating; RoHS compliant



Qualified according to JEDEC



Optimized for high temperature operation

Benefits



System efficiency improvement over Si diodes



System cost / size savings due to reduced cooling requirements



Enabling higher frequency / increased power density solutions



Higher system reliability due to lower operating temperatures



Reduced EMI

Applications



SMPS; CCM PFC



Solar applications; UPS; Motor Drives

Table 1

Key Performance Parameters

Parameter

Value

Unit

1200

V

36

nC

10

A

Table 2

Pin Definition

Pin 1

Pin 2

Pin 3

n.c.

C

A

Type / ordering Code

Package

Marking

Related links

IDW10S120

PG-TO247-3

D10S120

www.infineon.com/sic

IDW10S120

th

inQ!™ SiC Schottky Diode

1

2

3

1

2

3

CASE

The 1200V family of Infineon SiC Schottky diodes has emerged over the

years as the industry standard and is now being extended with the

IDWxxS120 product family in the TO247 package.

The very good thermal characteristics of the TO247 in combination with

applications where relatively high currents are demanded and utmost

efficiency is required. With the introduction of this package, Infineon now

offers a current capability of up to 30A in the 1200V range.