NVD4808N datasheet(1/8 Pages) ONSEMI

Part #	NVD4808N

Description	Power MOSFET 30 V, 63 A, Single N?묬hannel, DPAK/IPAK

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Manufacturer	ONSEMI [ON Semiconductor]

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May, 2012 − Rev. 7

1

Publication Order Number:

NTD4808N/D

NTD4808N, NVD4808N

Power MOSFET

30 V, 63 A, Single N−Channel, DPAK/IPAK

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These are Pb−Free Devices

Applications

• CPU Power Delivery

• DC−DC Converters

• Low Side Switching

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Note 1)

Steady

State

TA = 25°C

ID

13.8

A

TA = 85°C

10.7

Power Dissipation

RqJA (Note 1)

TA = 25°C

PD

2.63

W

Continuous Drain

Current RqJA

(Note 2)

TA = 25°C

ID

10

A

TA = 85°C

7.8

Power Dissipation

RqJA (Note 2)

TA = 25°C

PD

1.4

W

Continuous Drain

Current RqJC

(Note 1)

TC = 25°C

ID

63

A

TC = 85°C

49

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

54.6

W

Pulsed Drain

Current

tp=10ms

TA = 25°C

IDM

126

A

Current Limited by Package

TA = 25°C

IDmaxPkg

45

A

Operating Junction and Storage

Temperature

TJ,

TSTG

−55 to

+175

°C

Source Current (Body Diode)

IS

45

A

Drain to Source dV/dt

dV/dt

6

V/ns

Single Pulse Drain−to−Source Avalanche

Energy (VDD = 24 V, VGS = 10 V,

IL = 17 Apk, L = 1.0 mH, RG = 25 W)

EAS

144.5

mJ

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAMS

& PIN ASSIGNMENTS

http://onsemi.com

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

8.0 mW @ 10 V

63 A

12.4 mW @ 4.5 V

G

S

N−CHANNEL MOSFET

D

DPAK

CASE 369AA

STYLE 2

IPAK

CASE 369D

STYLE 2

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

1

Gate

2

Drain 3

Source

4

Drain

4

Drain

2

Drain

1

Gate

3

Source

Y

= Year

WW

= Work Week

4808N = Device Code

G

= Pb−Free Package

1

2

3

4

1 2

3

4

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