NTD5807N datasheet(1/7 Pages) ONSEMI

Part #	NTD5807N

Description	Power MOSFET 40 V, 23 A, Single N?묬hannel, DPAK/IPAK

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Manufacturer	ONSEMI [ON Semiconductor]

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June, 2014 − Rev. 5

1

Publication Order Number:

NTD5807N/D

NTD5807N, NVD5807N

Power MOSFET

40 V, 23 A, Single N−Channel, DPAK/IPAK

Features

• Low RDS(on)

• High Current Capability

• Avalanche Energy Specified

• AEC−Q101 Qualified and PPAP Capable − NVD5807N

• These Devices are Pb−Free and are RoHS Compliant

Applications

• CCFL Backlight

• DC Motor Control

• Class D Amplifier

• Power Supply Secondary Side Synchronous Rectification

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

40

V

Gate−to−Source Voltage − Continuous

VGS

"20

V

Gate−to−Source Voltage

− Non−Repetitive (tp < 10 mS)

VGS

"30

V

Continuous Drain

Current (RqJC)

(Note 1)

Steady

State

TC = 25°C

ID

23

A

TC = 100°C

16

Power Dissipation

(RqJC) (Note 1)

TC = 25°C

PD

33

W

Pulsed Drain Current

tp = 10 ms

IDM

45

A

Operating Junction and Storage Temperature

TJ, Tstg

− 55 to

175

°C

Source Current (Body Diode)

IS

23

A

Single Pulse Drain−to−Source Avalanche

Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,

IL(pk) = 14 A, L = 0.3 mH, VDS = 40 V)

EAS

29.4

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

RqJC

4.5

°C/W

Junction−to−Ambient − Steady State (Note 1)

RqJA

107

1. Surface−mounted on FR4 board using the minimum recommended pad size.

DPAK

CASE 369AA

(Surface Mount)

STYLE 2

MARKING DIAGRAMS

& PIN ASSIGNMENT

40 V

37 m

W @ 4.5 V

RDS(on) MAX

ID MAX

V(BR)DSS

31 m

W @ 10 V

http://onsemi.com

1 2

3

4

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

1

Gate

2

Drain 3

Source

4

Drain

A

= Assembly Location*

Y

= Year

WW

= Work Week

5807N = Device Code

G

= Pb−Free Package

23 A

G

S

N−CHANNEL MOSFET

D

IPAK

CASE 369D

(Straight Lead

DPAK)

1

2

3

4

Drain

2

Drain

1

Gate

3

Source

16 A

* The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package, the front side assembly

code may be blank.

Similar Part No. - NTD5807N

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTD5807N	138Kb / 6P	Power MOSFET 40 V, 23 A, Single N?묬hannel, DPAK/IPAK February, 2010 ??Rev. 2
SHENZHEN DOINGTER SEMIC...	NTD5807N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
ON Semiconductor	NTD5807NG	138Kb / 6P	Power MOSFET 40 V, 23 A, Single N?묬hannel, DPAK/IPAK February, 2010 ??Rev. 2
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