UPA802T

NPN SILICON HIGH

FREQUENCY TRANSISTOR

SILICON TRANSISTOR

• SMALL PACKAGE STYLE:

2 NE681 Die in a 2 mm x 1.25 mm package

• LOW NOISE FIGURE:

NF = 1.4 dB TYP at 1 GHz

• HIGH GAIN:

• LOW CURRENT OPERATION

FEATURES

PACKAGE OUTLINE S06

(Top View)

DESCRIPTION

The UPA802T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

various hand-held wireless applications.

T

2

0

8

A

P

U

R

E

B

M

U

N

T

R

A

P

6

0

S

E

N

I

L

T

U

O

E

G

A

K

C

A

P

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

μ

8

.

0

A

μ

8

.

0

A

0

4

2

0

0

1

0

7

A

m

7

=

GHz

4.5

7.0

9

.

0

F

p

z

H

M

1

=

f

,

0

=

dB

10

12

NF

7

.

1

4

.

1

B

d

z

H

G

1

=

f

,

A

m

7

=

5

8

.

0

:

oi

t

a

R

Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.

2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA802T-T1, 3K per reel.

Note:

Pin 3 is identified with a circle on the bottom of the package.

PIN OUT

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

2.1 ± 0.1

1.25 ± 0.1

0 ~ 0.1

0.15

0.9 ± 0.1

0.7

2.0 ± 0.2

0.65

1.3

1

2

3

4

5

6

0.2 (All Leads)

+0.10

- 0.05