ECH8654 datasheet(2/7 Pages) ONSEMI

Part #	ECH8654

Description	P-Channel Power MOSFET ??0V, ??A, 38m廓, Dual ECH8

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ECH8654

No. A0981-2/7

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--20

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--20V, VGS=0V

--1

μA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--0.4

--1.3

V

Forward Transfer Admittance

| yfs |

VDS=--10V, ID=--3A

4.9

8.3

S

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=--3A, VGS=--4.5V

29

38

mΩ

RDS(on)2

ID=--1.5A, VGS=--2.5V

41

58

mΩ

RDS(on)3

ID=--0.5A, VGS=--1.8V

64

98

mΩ

Input Capacitance

Ciss

VDS=--10V, f=1MHz

960

pF

Output Capacitance

Coss

180

pF

Reverse Transfer Capacitance

Crss

140

pF

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

14

ns

Rise Time

tr

55

ns

Turn-OFF Delay Time

td(off)

92

ns

Fall Time

tf

68

ns

Total Gate Charge

Qg

VDS=--10V, VGS=--4.5V, ID=--5A

11

nC

Gate-to-Source Charge

Qgs

2.0

nC

Gate-to-Drain “Miller” Charge

Qgd

2.8

nC

Diode Forward Voltage

VSD

IS=--5A, VGS=0V

--0.82

--1.2

V

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

ECH8654-TL-H

ECH8

3,000pcs./reel

Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G

50Ω

G

S

D

ID= --3A

RL=3.33Ω

VDD= --10V

VOUT

ECH8654

VIN

0V

--4V

VIN

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