SI4972DY datasheet(10/15 Pages) VISHAY

Part #	SI4972DY

Description	Dual N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73849

S09-0138-Rev. D, 02-Feb-09

Vishay Siliconix

Si4972DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases

where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Current Derating* (Ch 2)

Power Derating, Junction-to-Ambient (Ch 2)

0

2

4

6

8

0

25

50

75

100

125

150

TC - Case Temperature (°C)

0.0

0.3

0.6

0.9

1.2

1.5

0

25

50

75

100

125

150

TA - Ambient Temperature (°C)

Power Derating, Junction-to-Foot (Ch 2)

0.0

0.8

1.6

2.4

3.2

4.0

0

25

50

75

100

125

150

TC - Case Temperature (°C)

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SI4972DY Datasheet(PDF) 10 Page - Vishay Siliconix

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