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PS8551L4-V-E3 Datasheet(PDF) 6 Page - California Eastern Labs |
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PS8551L4-V-E3 Datasheet(HTML) 6 Page - California Eastern Labs |
6 / 18 page PS8551L4 Chapter Title 7 1 f o 6 e g a P 0 0 . 2 . v e R 0 0 2 0 J E 9 3 0 0 S D 8 0 R Sep 06, 2011 ELECTRICAL CHARACTERISTICS (AC Characteristics) (TYP.: TA = 25°C, VIN+ = VIN− = 0 V, VDD1 = VDD2 = 5 V, MIN., MAX.: refer to RECOMMENDED OPERATING CONDITIONS, unless otherwise specified) Parameter Symbol Conditions MIN. TYP. MAX. Unit VOUT Bandwidth (−3 dB) fC VIN+ = 200 mVp-p, sine wave 50 100 kHz VOUT N e si o N OUT VIN+ .s . m .r V m 5 . 1 3 V 0 = VIN to VOUT Signal Delay (50 to 10%) tPD10 VIN+ = 0 to 150 mV step 2.03 3.3 μ s VIN to VOUT Signal Delay (50 to 50%) tPD50 6 . 5 1 0 . 4 VIN to VOUT Signal Delay (50 to 90%) tPD90 9 . 9 2 0 . 6 VOUT Rise Time/Fall Time (10 to 90%) tr/tf VIN+ = 0 to 150 mV step 3.53 6.6 μ s Common Mode Transient Immunity*1 CMTI VCM = 0.5 kV, TA = 25°C 10 25 kV/μs Power Supply Noise Rejection*2 .s . m .r V m 0 0 1 z H M 1 = f R S P *1 CMTI is tested by applying a pulse that rises and falls suddenly (VCM = 0.5 kV) between GND1 on the input side and GND2 on the output side (pins 4 and 5) by using the circuit shown in Fig. 9 CMTI Test Circuit. CMTI is defined at the point where the differential output voltage (VOUT+ − VOUT−) fluctuates 200 mV (>1 μs) or more from the average output voltage. *2 This is the value of the transient voltage at the differential output when 1 Vp-p, 1 MHz, and 40 ns rise/fall time square wave is applied to both VDD1 and VDD2. A Business Partner of Renesas Electronics Corporation. |
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