Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

NE5550234-AZ Datasheet(PDF) 1 Page - California Eastern Labs

Part # NE5550234-AZ
Description  Silicon Power MOS FET
Download  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NE5550234-AZ Datasheet(HTML) 1 Page - California Eastern Labs

  NE5550234-AZ Datasheet HTML 1Page - California Eastern Labs NE5550234-AZ Datasheet HTML 2Page - California Eastern Labs NE5550234-AZ Datasheet HTML 3Page - California Eastern Labs NE5550234-AZ Datasheet HTML 4Page - California Eastern Labs NE5550234-AZ Datasheet HTML 5Page - California Eastern Labs NE5550234-AZ Datasheet HTML 6Page - California Eastern Labs NE5550234-AZ Datasheet HTML 7Page - California Eastern Labs NE5550234-AZ Datasheet HTML 8Page - California Eastern Labs NE5550234-AZ Datasheet HTML 9Page - California Eastern Labs Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 15 page
background image
4
1
f
o
1
e
g
a
P
0
0
.
3
.
v
e
R
0
0
3
0
J
E
9
3
0
0
S
D
9
0
R
Mar 12, 2013
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
t
e
e
h
S
a
t
a
D
NE5550234
Silicon Power MOS FET
FEATURES
High Output Power
: Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High Linear gain
: GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)
High ESD tolerance
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
150 MHz Band Radio System
460 MHz Band Radio System
900 MHz Band Radio System
ORDERING INFORMATION
Part Number
Order Number
Package
Marking
Supplying Form
5
V
Z
A
-
4
3
2
0
5
5
5
E
N
4
3
2
0
5
5
5
E
N
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
NE5550234-T1
NE5550234-T1-AZ
3-pin
power
minimold
(34 PKG)
(Pb-Free)
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550234-AZ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
30
V
Gate to Source Voltage
VGS
6.0
V
I
t
n
e
r
r
u
C
n
i
a
r
D
DS
0.6
A
Drain Current
(50% Duty Pulsed)
IDS-pulse
1.2
A
Total Power Dissipation
Note
Ptot
12.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note: Value at TC = 25°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0039EJ0300
Rev.3.00
Mar 12, 2013
A Business Partner of Renesas Electronics Corporation.


Similar Part No. - NE5550234-AZ

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
NE5550234-AZ RENESAS-NE5550234-AZ Datasheet
1Mb / 16P
   Silicon Power MOS FET
More results

Similar Description - NE5550234-AZ

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
NE5510279A RENESAS-NE5510279A Datasheet
288Kb / 12P
   SILICON POWER MOS FET
2003
NE552R679A RENESAS-NE552R679A Datasheet
290Kb / 11P
   SILICON POWER MOS FET
2003
NE5500434 RENESAS-NE5500434 Datasheet
290Kb / 9P
   SILICON POWER MOS FET
2007
NE5520379A RENESAS-NE5520379A Datasheet
295Kb / 13P
   SILICON POWER MOS FET
2003
logo
NEC
NE5500179A NEC-NE5500179A Datasheet
66Kb / 11P
   SILICON POWER MOS FET
logo
Renesas Technology Corp
NE5550234 RENESAS-NE5550234_13 Datasheet
1Mb / 16P
   Silicon Power MOS FET
NE5500134 RENESAS-NE5500134 Datasheet
285Kb / 8P
   SILICON POWER MOS FET
2007
NE5500234 RENESAS-NE5500234 Datasheet
293Kb / 9P
   SILICON POWER MOS FET
2007
NE5520279A RENESAS-NE5520279A Datasheet
290Kb / 11P
   SILICON POWER MOS FET
2003
NE552R479A RENESAS-NE552R479A Datasheet
291Kb / 11P
   SILICON POWER MOS FET
2003
NE5550234 RENESAS-NE5550234 Datasheet
1Mb / 16P
   Silicon Power MOS FET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com