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NAND512R3A2C Datasheet(PDF) 1 Page - Numonyx B.V

Part # NAND512R3A2C
Description  512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

NAND512R3A2C Datasheet(HTML) 1 Page - Numonyx B.V

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Not For New Design
This is information on a product still in production but not recommended for new designs.
June 2009
Rev 5
1/55
1
NAND512R3A2C
NAND512R4A2C NAND512W3A2C
512-Mbit, 528-byte/264-word page,
1.8 V/3 V, SLC NAND flash memories
Features
●
High density NAND flash memories
– 512-Mbit memory array
– Cost effective solutions for mass storage
applications
●
NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
●
Supply voltage: 1.8 V, 3 V
●
Page size
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words
●
Block size
– x8 device: (16K + 512 spare) bytes
– x16 device: (8K + 256 spare) words
●
Page read/program
– Random access:
12 µs (3 V)/15 µs (1.8 V) (max)
– Sequential access:
30 ns (3 V)/50 ns (1.8 V) (min)
– Page program time: 200 µs (typ)
●
Copy back program mode
●
Fast block erase: 2 ms (typ)
●
Status register
●
Electronic signature
●
Chip Enable ‘don’t care’
●
Security features
–OTP area
– Serial number (unique ID) option
●
Hardware data protection
– Program/erase locked during power
transitions
●
Data integrity
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
●
RoHS compliant packages
●
Development tools
– Error correction code models
– Bad blocks management and wear leveling
algorithms
– Hardware simulation models
FBGA
TSOP48 12 x 20 mm (N)
VFBGA55 8 x 10 x 1.05 mm (ZD)
VFBGA63 9 x 11 x 1.05 mm (ZA)
Table 1.
Device summary
Reference
Root part number
NAND512-A2C
NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
www.numonyx.com


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