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JSST271 Datasheet(PDF) 2 Page - Vishay Siliconix |
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JSST271 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page J/SST270 Series Vishay Siliconix www.vishay.com 8-2 Document Number: 70258 S-04233—Rev. D, 02-Jul-01 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST270 J/SST271 Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 30 Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –1 nA 0.5 2.0 1.5 4.5 V Saturation Drain Currentb IDSS VDS = –15 V, VGS = 0 V –2 –15 –6 –50 mA VGS = 20 V, VDS = 0 V 10 200 200 pA Gate Reverse Current IGSS TA = 125_C 5 nA Gate Operating Current IG VDG = –15 V, ID = –1 mA 10 Drain Cutoff Current ID(off) VDS = –15 V, VGS = 10 V –10 pA Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 V Dynamic Common-Source Forward Transconductance gfs VDS = –15 V, VGS = 0 V 6 15 8 18 mS Common-Source Output Conductance gos VDS = –15 V, VGS = 0 V f = 1 kHz 200 500 mS Common-Source Input Capacitance Ciss 20 Common-Source Reverse Transfer Capacitance Crss VDS = –15 V, VGS = 0 V f = 1 MHz 4 pF Equivalent Input Noise Voltage en VDG = –10 V, VGS = 0 V f = 1 kHz 20 nV ⁄ √Hz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PSCIA b. Pulse test: PW v300 ms duty cycle v3%. TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 200 06 8 10 4 2 160 0 –100 –80 –60 –40 –20 0 On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage VGS(off) – Gate-Source Cutoff Voltage (V) rDS @ ID = –1 mA, VGS = 0 V IDSS @ VDS = –15 V, VGS = 0 V IDSS rDS 120 80 40 18 0 15 12 9 6 3 68 10 2 250 200 150 100 50 0 Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage VGS(off) – Gate-Source Cutoff Voltage (V) gfs and gos @ VDS = –15 V VGS = 0 V, f = 1 kHz gfs gos 4 |
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