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EDS2516APSA-7AL Datasheet(PDF) 6 Page - Elpida Memory

Part # EDS2516APSA-7AL
Description  256M bits SDRAM
Download  51 Pages
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EDS2516APSA-7AL Datasheet(HTML) 6 Page - Elpida Memory

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EDS2508APSA, EDS2516APSA
Data Sheet E0228E30 (Ver. 3.0)
6
Pin Capacitance (TA = 25°C, VDD, VDDQ = 3.3V ± 0.3V)
Parameter
Symbol
Pins
min.
Typ
max.
Unit
Notes
Input capacitance
CI1
CLK
2.0
3.5
pF
1, 2, 4
CI2
Address, CKE, /CS, /RAS,
/CAS, /WE, DQM,
2.0
3.8
pF
1, 2, 4
Data input/output capacitance
CI/O
DQ
4
6.5
pF
1, 2, 3, 4
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1MHz, 1.4V bias, 200mV swing.
3. DQM = VIH to disable DOUT.
4. This parameter is sampled and not 100% tested.
AC Characteristics (TA = 0 to +70
°°°°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)
-7A
-75
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
System clock cycle time
tCK
7.5
7.5
ns
1
CLK high pulse width
tCH
2.5
2.5
ns
1
CLK low pulse width
tCL
2.5
2.5
ns
1
Access time from CLK
tAC
5.4
5.4
ns
1, 2
Data-out hold time
tOH
3.0
3.0
ns
1, 2
CLK to Data-out low impedance
tLZ
1
1
ns
1, 2, 3
CLK to Data-out high impedance
tHZ
5.4
5.4
ns
1, 4
Input setup time
tSI
1.5
1.5
ns
1
Input hold time
tHI
0.8
0.8
ns
1
Ref/Active to Ref/Active command
period
tRC
60
67.5
ns
1
Active to Precharge command
period
tRAS
45
120000
45
120000
ns
1
Active command to column
command (same bank)
tRCD
15
20
ns
1
Precharge to active command
period
tRP
15
20
ns
1
Write recovery or data-in to
precharge lead time
tDPL
15
15
ns
1
Last data into active latency
tDAL
2CLK +
15ns
2CLK +
20ns
Active (a) to Active (b) command
period
tRRD
15
15
ns
1
Transition time (rise and fall)
tT
0.5
5
0.5
5
ns
Refresh period
(8192 refresh cycles)
tREF
64
64
ms
Notes: 1. AC measurement assumes tT = 0.5ns. Reference level for timing of input signals is 1.4V.
2. Access time is measured at 1.4V. Load condition is CL = 50pF.
3. tLZ (min.) defines the time at which the outputs achieves the low impedance state.
4. tHZ (max.) defines the time at which the outputs achieves the high impedance state.


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