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EDS2516APSA-7AL Datasheet(PDF) 6 Page - Elpida Memory |
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EDS2516APSA-7AL Datasheet(HTML) 6 Page - Elpida Memory |
6 / 51 page EDS2508APSA, EDS2516APSA Data Sheet E0228E30 (Ver. 3.0) 6 Pin Capacitance (TA = 25°C, VDD, VDDQ = 3.3V ± 0.3V) Parameter Symbol Pins min. Typ max. Unit Notes Input capacitance CI1 CLK 2.0 — 3.5 pF 1, 2, 4 CI2 Address, CKE, /CS, /RAS, /CAS, /WE, DQM, 2.0 — 3.8 pF 1, 2, 4 Data input/output capacitance CI/O DQ 4 — 6.5 pF 1, 2, 3, 4 Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method. 2. Measurement condition: f = 1MHz, 1.4V bias, 200mV swing. 3. DQM = VIH to disable DOUT. 4. This parameter is sampled and not 100% tested. AC Characteristics (TA = 0 to +70 °°°°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V) -7A -75 Parameter Symbol min. max. min. max. Unit Notes System clock cycle time tCK 7.5 — 7.5 — ns 1 CLK high pulse width tCH 2.5 — 2.5 — ns 1 CLK low pulse width tCL 2.5 — 2.5 — ns 1 Access time from CLK tAC — 5.4 — 5.4 ns 1, 2 Data-out hold time tOH 3.0 — 3.0 — ns 1, 2 CLK to Data-out low impedance tLZ 1 — 1 — ns 1, 2, 3 CLK to Data-out high impedance tHZ — 5.4 — 5.4 ns 1, 4 Input setup time tSI 1.5 — 1.5 — ns 1 Input hold time tHI 0.8 — 0.8 — ns 1 Ref/Active to Ref/Active command period tRC 60 — 67.5 — ns 1 Active to Precharge command period tRAS 45 120000 45 120000 ns 1 Active command to column command (same bank) tRCD 15 — 20 — ns 1 Precharge to active command period tRP 15 — 20 — ns 1 Write recovery or data-in to precharge lead time tDPL 15 — 15 — ns 1 Last data into active latency tDAL 2CLK + 15ns — 2CLK + 20ns — Active (a) to Active (b) command period tRRD 15 — 15 — ns 1 Transition time (rise and fall) tT 0.5 5 0.5 5 ns Refresh period (8192 refresh cycles) tREF — 64 — 64 ms Notes: 1. AC measurement assumes tT = 0.5ns. Reference level for timing of input signals is 1.4V. 2. Access time is measured at 1.4V. Load condition is CL = 50pF. 3. tLZ (min.) defines the time at which the outputs achieves the low impedance state. 4. tHZ (max.) defines the time at which the outputs achieves the high impedance state. |
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