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HB52RD649DC-B Datasheet(PDF) 9 Page - Elpida Memory |
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HB52RD649DC-B Datasheet(HTML) 9 Page - Elpida Memory |
9 / 16 page HB52RF649DC-B, HB52RD649DC-B Data Sheet E0223H30 (Ver. 3.0) 9 DC Characteristics 1 (TA = 0 to 65°C, VCC = 3.3V ± 0.3V, VSS = 0V) Parameter Symbol Grade Max. Unit Test conditions Notes Operating current (CL = 2) ICC1 -75 -A6 1260 1125 mA Burst length = 1 tRC = min. 1, 2, 3 (CL = 3) ICC1 -75 -A6 1260 1125 mA Standby current in power down ICC2P 54 mA CKE0 = VIL, tCK = 12ns 6 Standby current in power down (input signal stable) ICC2PS 36 mA CKE0 = VIL, tCK = ∞ 7 Standby current in non power down ICC2N 360 mA CKE0, /S = VIH, tCK = 12ns 4 Active standby current in power down ICC3P 72 mA CKE0, /S = VIH, tCK = 12ns 1, 2, 6 Active standby current in non power down ICC3N 540 mA CKE0, /S = VIH, tCK = 12ns 1, 2, 4 Burst operating current (CL = 2) ICC4 -75 -A6 1170 1170 mA tCK = min., BL = 4 1, 2, 5 (CL = 3) ICC4 -75 -A6 1485 1170 mA Refresh current ICC5 2250 mA tRC = min. 3 Self refresh current ICC6 54 mA VIH ≥ VCC – 0.2V VIL ≤ 0.2V 8 Self refresh current (L-version) ICC6 36 mA Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output open condition. 2. One bank operation. 3. Input signals are changed once per one clock. 4. Input signals are changed once per two clocks. 5. Input signals are changed once per four clocks. 6. After power down mode, CK0/CK1 operating current. 7. After power down mode, no CK0/CK1 operating current. 8. After self refresh mode set, self refresh current. DC Characteristics 2 (TA = 0 to 65°C, VCC = 3.3V ± 0.3V, VSS = 0V) Parameter Symbol Grade min. Max. Unit Test conditions Notes Input leakage current ILI –10 10 µA 0 ≤ Vin ≤ VCC Output leakage current ILO –10 10 µA 0 ≤ Vout ≤ VCC DQ = disable Output high voltage VOH 2.4 — V IOH = –4 mA Output low voltage VOL — 0.4 V IOL = 4 mA |
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