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IRFZ44NSPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFZ44NSPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  IRFZ44NSPbF IRFZ44NLPbF HEXFET® Power MOSFET l Advanced Process Technology l SurfaceMount(IRFZ44NS) l Low-profilethrough-hole(IRFZ44NL) l 175°COperatingTemperature l Fast Switching l FullyAvalancheRated l Lead-Free Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devicedesignthatHEXFETpowerMOSFETsarewellknown for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodatingdiesizesuptoHEX-4.Itprovidesthehighest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44NL) is available for low- profile applications. Description VDSS = 55V RDS(on) = 0.0175Ω ID = 49A 2 D Pak TO-262 S D G 3/18/04 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.5 RθJA Junction-to-Ambient ––– 40 °C/W Thermal Resistance Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A IDM Pulsed Drain Current 160 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 94 W Linear Derating Factor 0.63 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 25 A EAR Repetitive Avalanche Energy 9.4 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C www.irf.com 1 PD - 95124 |
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