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MAGX-000245-025000-V1 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MAGX-000245-025000-V1 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
2 / 6 page GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Rev. V1 MAGX-000245-025000 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 2 Electrical Specifications1: Freq. = 2450 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: VDD = +28 V, IDQ = 100 mA, CW Operation Input Power Pout= 25 W Pin - 1.6 2.4 W Power Gain Pout= 25 W GP 10.2 12 - dB Drain Efficiency Pout= 25 W ηD 57 62 - % Load Mismatch Stability Pout= 25 W VSWR-S - 5:1 - - Load Mismatch Tolerance Pout= 25 W VSWR-T - 10:1 - - 1. Electrical Specifications measured in MACOM RF evaluation board. Parameter Test Conditions Symbol Min. Typ. Max. Units DC Characteristics Drain-Source Leakage Current VGS = -8 V, VDS = 175 V IDS - - 3.0 mA Gate Threshold Voltage VDS = 5 V, ID = 6 mA VGS (TH) -5 -3 -2 V Forward Transconductance VDS = 5 V, ID = 1500 mA GM 1.1 - - S Dynamic Characteristics Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 13.2 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 5.6 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.5 - pF Electrical Characteristics: TA = 25°C Correct Device Sequencing Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (+28V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. |
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