Electronic Components Datasheet Search |
|
STP75N75F4 Datasheet(PDF) 5 Page - STMicroelectronics |
|
STP75N75F4 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page STP75N75F4 Electrical characteristics Doc ID 023484 Rev 1 5/12 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current - 78 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 312 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 78 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 78 A, VDD = 60 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 15) - 67 183 5.5 ns nC A |
Similar Part No. - STP75N75F4 |
|
Similar Description - STP75N75F4 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |