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STX0560 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STX0560
Description  High voltage fast-switching NPN power transistor
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STX0560
Electrical characteristics
Doc ID 18336 Rev 3
3/13
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 800 V
10
µA
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 10 mA
7
V
VCEO(sus)
(1)
1.
Pulse test: pulse duration
≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter
sustaining voltage (IB = 0)
IC = 10 mA
600
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 0.5 A
IB = 100 mA
1
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 0.5 A
IB = 100 mA
1
V
hFE
DC current gain
IC = 5 mA
VCE = 5 V
IC = 20 mA
VCE = 5 V
70
90
tr
ts
tf
Resistive load
Rise time
Storage time
Fall time
VCC=200 V, IC=0.3 A
IB1=60 mA, IB2=-120 mA
Tp=30 µs
140
4.4
220
ns
µs
ns




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