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DG417BDY Datasheet(PDF) 3 Page - Vishay Siliconix |
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DG417BDY Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 16 page  Document Number: 72107 S09-1261-Rev. D, 13-Jul-09 www.vishay.com 3 Vishay Siliconix DG417B, DG418B, DG419B SCHEMATIC DIAGRAM Typical Channel Figure 1. Level Shift/ Drive VIN VL S V+ GND V - D V - V+ SPECIFICATIONSa Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 V f Temp.b Typ.c A Suffix - 55 °C to 125 °C D Suffix - 40 °C to 85 °C Unit Min.d Max.d Min.d Max.d Analog Switch Analog Signal Rangee VANALOG Full - 15 15 - 15 15 V Drain-Source On-Resistance RDS(on) IS = - 10 mA, VD = ± 12.5 V V+ = 13.5 V, V- = - 13.5 V Room Full 15 25 34 25 29 Ω Switch Off Leakage Current IS(off) V+ = 16.5, V- = - 16.5 V VD = ± 15.5 V, VS = ± 15.5 V Room Full - 0.1 - 0.25 - 20 0.25 20 - 0.25 - 5 0.25 5 nA ID(off) DG417B DG418B Room Full - 0.1 - 0.25 - 20 0.25 20 - 0.25 - 5 0.25 5 DG419B Room Full - 0.1 - 0.75 - 60 0.75 60 - 0.75 - 12 0.75 12 Channel On Leakage Current ID(on) V+ = 16.5 V, V- = - 16.5 V VS = VD = ± 15.5 V DG417B DG418B Room Full - 0.4 - 0.4 - 40 0.4 40 - 0.4 - 10 0.4 10 DG419B Room Full - 0.4 - 0.75 - 60 0.75 60 - 0.75 - 12 0.75 12 Digital Control Input Current, VIN Low IIL Full - 0.5 0.5 - 0.5 0.5 µA Input Current, VIN High IIH Full - 0.5 0.5 - 0.5 0.5 Dynamic Characteristics Turn-On Time tON RL = 300 Ω, CL = 35 pF VS = ± 10 V, See Switching Time Test Circuit DG417B DG418B Room Full 62 89 106 89 99 ns Turn-Off Time tOFF DG417B DG418B Room Full 53 80 88 80 86 Transition Time tTRANS RL = 300 Ω, CL = 35 pF VS1 = ± 10 V, VS2 = ± 10 V DG419B Room Full 60 87 96 87 93 Break-Before-Make Time Delay tD RL = 300 Ω, CL = 35 pF VS1 = VS2 = ± 10 V DG419B Room 16 3 3 Charge Injection Q CL = 10 nF Vgen = 0 V, Rgen = 0 Ω Room 38 pC Off Isolatione OIRR RL = 50 Ω, CL = 5 pF, f = 1 MHz Room - 82 dB Channel-to-Channel Crosstalke XTALK DG419B Room - 88 |
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