Preliminary Data Sheet

TDA21101

Page 1

2002-03-28

• Fast rise and fall times for frequencies up to 2 MHz

• Capable of sinking and sourcing of more than 4 A peak current for lowest

switching losses

• Charges High Side (internally clamped to 10 V) and Low Side MOSFET´s gates

up to 12 V for lowest on-losses

• Adjustable High Side MOSFET gate drive voltage via high impedance PVCC pin

for optimizing ON losses, gate drive losses, and switching losses

• Integrates the bootstrap diode for reducing the part count

• Prevents from cross-conducting by adaptive gate drive control

• Protects the driver against over-temperature

• Supports shut-down mode for very low quiescent current through three-state input

• Compatible to standard PWM controller ICs

• Floating High Side MOSFET drive up to 30 V

• 1:1 compatible to HIP6601A and HIP6601B

• Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s and

Notebook CPU supplies

Type

Package

Marking

Ordering Code

TDA21101

P-DSO-8

21101G

Q67042-S4170-A101

1

8 PHASE

BOOT

2

7 P

VCC

PWM

3

6 V

CC

GND

4

5 GATE

LS

P-DSO-8

High speed Driver with bootstrapping for

dual Power MOSFETs

Features

Number Name

Description

1

Gate drive output for the N-Channel

High side MOSFET

2

BOOT

Floating bootstrap pin. To be

connected to the external bootstrap

capacitor to generate the gate drive

voltage for the high side N-Channel

MOSFET

3

PWM

Input for the PWM controller signal

4

GND

Ground

5

Gate drive output for the N-Channel

Low Side MOSFET

6

VCC

Supply voltage

7

PVCC

High impedance input to adjust the

High Side gate drive

8

PHASE

This pin connects to the junction of

the High Side and the Low Side

MOSFET

Top View

Pinout