DTC114TM datasheet(2/10 Pages) ROHM

Part #	DTC114TM

Description	NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

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Manufacturer	ROHM [Rohm]

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DTC114T series

Datasheet

l

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Values

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

5

V

Collector current

IC

100

mA

Power dissipation

DTC114TM

PD*1

150

mW

DTC114TEB

150

DTC114TE

150

DTC114TUB

200

DTC114TUA

200

DTC114TKA

200

Junction temperature

Tj

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

l

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Collector-base breakdown

voltage

BVCBO

IC = 50μA

50

-

V

Collector-emitter breakdown

voltage

BVCEO

IC = 1mA

50

-

V

Emitter-base breakdown voltage

BVEBO

IE = 50μA

5

-

V

Collector cut-off current

ICBO

VCB = 50V

-

0.5

μA

Emitter cut-off current

IEBO

VEB = 4V

-

0.5

μA

Collector-emitter saturation voltage

VCE(sat)

IC / IB = 10mA / 1mA

-

0.3

V

DC current gain

hFE

VCE = 5V, IC = 1mA

100

250

600

-

Input resistance

R1

-

7

10

13

kΩ

Transition frequency

fT*2

VCE = 10V, IE = -5mA,

f = 100MHz

-

250

-

MHz

*1 Each terminal mounted on a reference footprint

*2 Characteristics of built-in transistor

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2/9

20121023 - Rev.001

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