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PBL38621-2 Datasheet(PDF) 2 Page - Ericsson |
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PBL38621-2 Datasheet(HTML) 2 Page - Ericsson |
2 / 16 page PBL 386 21/2 2 Maximum Ratings Parameter Symbol Min Max Unit Temperature, Humidity Storage temperature range T Stg -55 +150 °C Operating temperature range T Amb -40 +110 °C Operating junction temperature range, Note 1 T J -40 +140 °C Power supply, -40 °C ≤ T Amb ≤ +85 °C V CC with respect to A/BGND V CC -0.4 6.5 V V Bat2 with respect to A/BGND V Bat2 V Bat 0.4 V V Bat with respect to A/BGND, continuous V Bat -75 0.4 V V Bat with respect to A/BGND, 10 ms V Bat -80 0.4 V Power dissipation Continuous power dissipation at T Amb ≤ +85 °CPD 1.5 W Ground Voltage between AGND and BGND V G -0,3 0,3 V Relay Driver Ring relay supply voltage BGND+14 V Ring trip comparator Input voltage V DT, VDR V Bat AGND V Input current I DT, IDR -5 5 mA Digital inputs, outputs (C1, C2, C3, DET) Input voltage V ID -0.4 V CC V Output voltage V OD -0.4 V CC V TIPX and RINGX terminals, -40 °C < T Amb < +85°C, V Bat = -50V Maximum supplied TIPX or RINGX current I TIPX, IRINGX -100 +100 mA TIPX or RINGX voltage, continuous (referenced to AGND), Note 2 V TA, VRA -80 2 V TIPX or RINGX, pulse < 10 ms, t Rep > 10 s, Note 2 V TA, VRA V Bat -10 5 V TIPX or RINGX, pulse < 1 µs, t Rep > 10 s, Note 2 V TA, VRA V Bat -25 10 V TIPX or RINGX, pulse < 250 ns, t Rep > 10 s, Notes 2 & 3 V TA, VRA V Bat -35 15 V Recommended Operating Condition Parameter Symbol Min Max Unit Ambient temperature T Amb -40 +85 °C V CC with respect to AGND V CC 4.75 5.25 V V Bat with respect to AGND V Bat -58 -8 V AGND with respect to BGND V G -100 100 mV Notes 1. The circuit includes thermal protection. Operation at or above 140 °C junction temperature may degrade device reliability. 2. With the diodes D VB and DVB2 included, see figure 12. 3. R F1 and RF2 ≥ 20 Ω is also required. Pulse is applied to TIP and RING outside RF1 and RF2. |
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