November 2013

©2003 Fairchild Semiconductor Corporation

FQD1N60C / FQU1N60C Rev. C1

www.fairchildsemi.com

1

Thermal Characteristics

Symbol

Parameter

FQD1N60CTM / FQU1N60CTU

Unit

Drain-Source Voltage

600

V

Drain Current

1A

0.6

A

Drain Current

- Pulsed

(Note 1)

4A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

33

mJ

Avalanche Current

(Note 1)

1A

Repetitive Avalanche Energy

(Note 1)

2.8

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

2.5

W

28

W

- Derate above 25°C

0.22

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

FQD1N60CTM /

FQU1N60CTU

Unit

Thermal Resistance, Junction-to-Case, Max.

4.53

°C/W

Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max.

110

50

FQD1N60C / FQU1N60C

600 V, 1.0 A, 11.5 Ω

Features

• Low Gate Charge (Typ. 4.8 nC)

• Low Crss (Typ. 3.5 pF)

• 100% Avalanche Tested

• RoHS Compliant

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce

on-state resistance, and to provide superior switching

performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

active power factor correction (PFC), and electronic lamp

ballasts.

G

D

S

I-PAK

D-PAK

G

S

D

G

S

D